Download file (1.11 MB)
Download as zip (1.08 MB)

Collection

Citation

Description:

半導体バリアCuInSe2、CuGaSe2を持つ磁気トンネル接合の伝導特性を第一原理計算によって調べた。その結果、両トンネル接合でΔ1状態の波動関数のコヒーレントトンネル現象が生じ、高いMR比が得られることが分かった。

Rights:

• In Copyright
  

  © 2017 The Japan Society of Applied Physics
  
  
  This is an author-created, un-copyedited version of an article accepted for publication/published
  in Japanese Journal of Applied Physics. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.7567/jjap.56.020306.

Keyword: Tunnel magnetoresistance, Magnetic tunnel junction, Spintronics

Date published: 2017-02-01

Publisher: Japan Society of Applied Physics

Journal:

• Japanese Journal of Applied Physics (ISSN: 13474065) vol. 56 issue. 2 020306

Funding:

• Japan Society for the Promotion of Science 16H06332
• Japan Society for the Promotion of Science 16H03852
• Japan Science and Technology Agency 2014-PM04-17-01

Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4481

First published URL: https://doi.org/10.7567/jjap.56.020306

Related item:

Other identifier(s):

Contact agent:

Updated at: 2024-04-11 16:30:26 +0900

Published on MDR: 2024-04-11 16:30:26 +0900