プロシーディングス論文 Effect of Energy Dissipation in Higher-Order Resonance on SCD MEMS Cantilevers Toward High f·Q
Guo Chen (author) (この著者で検索)
ORCID https://orcid.org/0009-0004-9263-5616 (unauthenticated)
National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group
ORCID ;
Zilong Zhang (author) (この著者で検索)
ORCID https://orcid.org/0000-0002-9759-9253
National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group
ORCID ;
Keyun Gu (author) (この著者で検索)
National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group
;
Satoshi Koizum (author) (この著者で検索)
ORCID https://orcid.org/0000-0003-4961-5658
National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group
SAMURAI NIMS Researchers Directory SAMURAI
ORCID SAMURAI ;
Zhaohui Huang (author) (この著者で検索)
China University of Geosciences
;
Meiyong Liao (author) (この著者で検索)
ORCID https://orcid.org/0000-0003-1361-4266
National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group
SAMURAI NIMS Researchers Directory SAMURAI
ORCID SAMURAI
コレクション

引用
Guo Chen, Zilong Zhang, Keyun Gu, Satoshi Koizum, Zhaohui Huang, Meiyong Liao. Effect of Energy Dissipation in Higher-Order Resonance on SCD MEMS Cantilevers Toward High f·Q. https://doi.org/10.48505/nims.8655

説明:

(abstract)

In this work, we investigate the higher-order resonance of SCD MEMS cantilevers with high f·Q value. The resonance frequency and Q factors were measured and analyzed at the first three order vibration modes. Under the 1st order vibration and 2nd order vibration mode, the dependence of the resonance frequency on the SCD cantilever length are depicted in Fig.1. (b, c, d, e). It is clear that for both of the fundamental mode and the higher-order mode, the resonance frequency and the SCD length follow the inverse power law relationship strictly. As shown in Fig.1. (f), it was found that the value of f·Q of the SCD cantilevers significantly increases with the higher-order resonance. The improvement of f·Q is due to the higher-order resonances suffer from less energy dissipation, possibly mainly on defects losses, than the fundamental mode.

権利情報:

キーワード: Diamond, MEMS

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会議: 2023年第84回応用物理学会秋季学術講演会 (2023-09-19 - 2023-09-23)

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原稿種別: 論文以外のデータ

MDR DOI: https://doi.org/10.48505/nims.8655

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更新時刻: 2026-10-13 16:51:23 +0900

MDRでの公開時刻: 2026-10-13 18:28:34 +0900

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