Article Thermoelectric properties of semiconducting approximant crystals in the Al–Ge–Ru system

Yutaka Iwasaki SAMURAI ORCID ; Yasuhiro Niwa ; Koichi Kitahara ORCID ; Kaoru Kimura ; Ryuji Tamura

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Citation
Yutaka Iwasaki, Yasuhiro Niwa, Koichi Kitahara, Kaoru Kimura, Ryuji Tamura. Thermoelectric properties of semiconducting approximant crystals in the Al–Ge–Ru system. Scripta Materialia. 2025, 273 (), 117100. https://doi.org/10.1016/j.scriptamat.2025.117100

Description:

(abstract)

Semiconducting quasicrystals and their approximant crystals (ACs) have attracted significant attention because of their potential applications as thermoelectric materials. Herein, we report the synthesis of a semiconducting AC in the Al–Ge–Ru system and its thermoelectric properties. The Al–Ge–Ru AC exhibited a band gap of approximately 0.25 eV. Notably, we observed a negative Seebeck coefficient, which reached a maximum magnitude of 200 µV K−1, marking the first example of an n-type semiconducting AC. The Al74Ge4Ru22 AC exhibiting degenerate semiconductor behavior reached a dimensionless figure of merit of 0.28 at a peak temperature of 473 K. This represents the highest figure of merit achieved to date for a quasicrystalline-based thermoelectric material.

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Keyword: Quasicrystal

Date published: 2025-11-20

Publisher: Elsevier BV

Journal:

  • Scripta Materialia (ISSN: 13596462) vol. 273 117100

Funding:

  • Japan Science and Technology Agency
  • Japan Society for the Promotion of Science JP23K26367
  • Japan Society for the Promotion of Science JP19H05818
  • Japan Society for the Promotion of Science JP23H01673
  • Japan Society for the Promotion of Science JP19H05817
  • Japan Society for the Promotion of Science JP19K15274
  • Japan Society for the Promotion of Science JP24K17495
  • Core Research for Evolutional Science and Technology JPMJCR22O3

Manuscript type: Publisher's version (Version of record)

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First published URL: https://doi.org/10.1016/j.scriptamat.2025.117100

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Updated at: 2025-11-25 16:30:03 +0900

Published on MDR: 2025-11-25 16:24:30 +0900

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