Yutaka Iwasaki
;
Yasuhiro Niwa
;
Koichi Kitahara
;
Kaoru Kimura
;
Ryuji Tamura
Description:
(abstract)Semiconducting quasicrystals and their approximant crystals (ACs) have attracted significant attention because of their potential applications as thermoelectric materials. Herein, we report the synthesis of a semiconducting AC in the Al–Ge–Ru system and its thermoelectric properties. The Al–Ge–Ru AC exhibited a band gap of approximately 0.25 eV. Notably, we observed a negative Seebeck coefficient, which reached a maximum magnitude of 200 µV K−1, marking the first example of an n-type semiconducting AC. The Al74Ge4Ru22 AC exhibiting degenerate semiconductor behavior reached a dimensionless figure of merit of 0.28 at a peak temperature of 473 K. This represents the highest figure of merit achieved to date for a quasicrystalline-based thermoelectric material.
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Keyword: Quasicrystal
Date published: 2025-11-20
Publisher: Elsevier BV
Journal:
Funding:
Manuscript type: Publisher's version (Version of record)
MDR DOI:
First published URL: https://doi.org/10.1016/j.scriptamat.2025.117100
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Updated at: 2025-11-25 16:30:03 +0900
Published on MDR: 2025-11-25 16:24:30 +0900
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