Article Growth and etching characteristics of (001) β- Ga2O3 by plasma-assisted molecular beam epitaxy

Yuichi Oshima SAMURAI ORCID (National Institute for Materials Science) ; Elaheh Ahmadi ORCID ; Stephen Kaun ; Feng Wu ; James S Speck

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Yuichi Oshima, Elaheh Ahmadi, Stephen Kaun, Feng Wu, James S Speck. Growth and etching characteristics of (001) β- Ga2O3 by plasma-assisted molecular beam epitaxy. SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 2018, 33 (1), 15013-15013. https://doi.org/10.1088/1361-6641/aa9c4d
SAMURAI

Alternative title: プラズマMBEによる (001) b-Ga2O3 の成長

Description:

(abstract)

We investigated the growth characteristics of homoepitaxial (001) b-Ga2O3 by plasma-assisted molecular beam epitaxy.

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  • In Copyright

    © 2017 IOP Publishing Ltd

    This is an author-created, un-copyedited version of an article accepted for publication/published
    in Semiconductor Science and Technology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or
    any version derived from it. The Version of Record is available online at https://doi.org/10.1088/1361-6641/aa9c4d.

Keyword: β-Ga2O3, MBE

Date published: 2018-01-01

Publisher: IOP Publishing

Journal:

  • SEMICONDUCTOR SCIENCE AND TECHNOLOGY (ISSN: 02681242) vol. 33 issue. 1 p. 15013-15013

Funding:

Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4360

First published URL: https://doi.org/10.1088/1361-6641/aa9c4d

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Updated at: 2024-01-22 09:42:02 +0900

Published on MDR: 2024-01-22 12:30:22 +0900

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