論文 Growth and etching characteristics of (001) β- Ga2O3 by plasma-assisted molecular beam epitaxy

Yuichi Oshima SAMURAI ORCID (National Institute for Materials Science) ; Elaheh Ahmadi ORCID ; Stephen Kaun ; Feng Wu ; James S Speck

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Yuichi Oshima, Elaheh Ahmadi, Stephen Kaun, Feng Wu, James S Speck. Growth and etching characteristics of (001) β- Ga2O3 by plasma-assisted molecular beam epitaxy. SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 2018, 33 (1), 15013-15013. https://doi.org/10.1088/1361-6641/aa9c4d
SAMURAI

代替タイトル: プラズマMBEによる (001) b-Ga2O3 の成長

説明:

(abstract)

We investigated the growth characteristics of homoepitaxial (001) b-Ga2O3 by plasma-assisted molecular beam epitaxy.

権利情報:

  • In Copyright
    © 2017 IOP Publishing Ltd
    This is an author-created, un-copyedited version of an article accepted for publication/published in Semiconductor Science and Technology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1088/1361-6641/aa9c4d.

キーワード: β-Ga2O3, MBE

刊行年月日: 2018-01-01

出版者: IOP Publishing

掲載誌:

  • SEMICONDUCTOR SCIENCE AND TECHNOLOGY (ISSN: 02681242) vol. 33 issue. 1 p. 15013-15013

研究助成金:

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4360

公開URL: https://doi.org/10.1088/1361-6641/aa9c4d

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更新時刻: 2024-01-22 09:42:02 +0900

MDRでの公開時刻: 2024-01-22 12:30:22 +0900

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