Atomic Layer Deposition of Polycrystalline Tin Dioxide Thin Films Using Liquid Bis（ethylcyclopentadienyl）tin

Fumikazu MIZUTANI; Nobutaka TAKAHASHI; Toshihide NABATAME

doi:10.4139/sfj.76.598

Journal article Atomic Layer Deposition of Polycrystalline Tin Dioxide Thin Films Using Liquid Bis（ethylcyclopentadienyl）tin

; ;

Download file (1.01 MB)
Download as zip (951 KB)

Collection

Citation

Fumikazu MIZUTANI, Nobutaka TAKAHASHI, Toshihide NABATAME. Atomic Layer Deposition of Polycrystalline Tin Dioxide Thin Films Using Liquid Bis（ethylcyclopentadienyl）tin. Journal of The Surface Finishing Society of Japan. 2025, 76 (12), 598-602. https://doi.org/10.4139/sfj.76.598

(BibTeX)

Description:

(abstract)

The liquid compound bis(ethylcyclopentadienyl)tin, Sn(EtCp)2 was synthesized and exhibits several notable characteristics, including a vapor pressure suitable for use as a precursor and thermal stability up to 230 °C. Using it as a precursor and O2 plasma as an oxdant, SnO2 thin films can be deposited by atomic layer deposition (ALD). A self-limiting reaction was confirmed with no nucleation delay for pulse times for Sn(EtCp)2 and O2 plasma of 10 s and 45 s, respectively, at a growth temperature of 200 °C. The growth per cycle (GPC) was 0.20 nm/cycle, which is higher than conventional precursors. Cross-sectional transmission electron microscopy revealed that the SnO2 film was uniform and polycrystalline even though it was deposited at 200 °C. X-ray diffraction analysis showed that the film was tetragonal rutile SnO2, and the (110) preferred orientation. Sn(EtCp)2 is a promising candidate precursor for depositing high quality SnO2 films with stoichiometric composition, high purity and crystallinity even at a low temperature.

Rights: