Atomic Layer Deposition of Polycrystalline Tin Dioxide Thin Films Using Liquid Bis（ethylcyclopentadienyl）tin

Fumikazu MIZUTANI; Nobutaka TAKAHASHI; Toshihide NABATAME

doi:10.4139/sfj.76.598

ジャーナル論文 Atomic Layer Deposition of Polycrystalline Tin Dioxide Thin Films Using Liquid Bis（ethylcyclopentadienyl）tin

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Fumikazu MIZUTANI, Nobutaka TAKAHASHI, Toshihide NABATAME. Atomic Layer Deposition of Polycrystalline Tin Dioxide Thin Films Using Liquid Bis（ethylcyclopentadienyl）tin. Journal of The Surface Finishing Society of Japan. 2025, 76 (12), 598-602. https://doi.org/10.4139/sfj.76.598

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(abstract)

The liquid compound bis(ethylcyclopentadienyl)tin, Sn(EtCp)2 was synthesized and exhibits several notable characteristics, including a vapor pressure suitable for use as a precursor and thermal stability up to 230 °C. Using it as a precursor and O2 plasma as an oxdant, SnO2 thin films can be deposited by atomic layer deposition (ALD). A self-limiting reaction was confirmed with no nucleation delay for pulse times for Sn(EtCp)2 and O2 plasma of 10 s and 45 s, respectively, at a growth temperature of 200 °C. The growth per cycle (GPC) was 0.20 nm/cycle, which is higher than conventional precursors. Cross-sectional transmission electron microscopy revealed that the SnO2 film was uniform and polycrystalline even though it was deposited at 200 °C. X-ray diffraction analysis showed that the film was tetragonal rutile SnO2, and the (110) preferred orientation. Sn(EtCp)2 is a promising candidate precursor for depositing high quality SnO2 films with stoichiometric composition, high purity and crystallinity even at a low temperature.

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