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説明:

We have studied the oxidation states and photoluminescence (PL) properties of GaAs(100) samples that incorporated buried InGaAs quantum well (QW) structures prepared by molecular-beam epitaxy (MBE). The surfaces of the MBE-grown GaAs(100) samples were controlled so that they were either As-rich c(4x4)α, Ga-rich (4x6) or Se-terminated (2x1) structures prior to oxidation. We found that the As/Ga composition ratio at the initial GaAs surface strongly affects the oxidation processes and the resultant PL properties.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: GaAs, Surface, Termination, Oxide, Arsenic

刊行年月日: 2025-06-28

出版者: AIP Publishing

掲載誌:

• Journal of Applied Physics (ISSN: 00218979) vol. 137 issue. 24

研究助成金:

• ATLA (Acquisition, Technology and Logistics Agency)-Japan JPJ004596

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1063/5.0274742

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更新時刻: 2025-06-27 16:30:25 +0900

MDRでの公開時刻: 2025-06-27 16:19:08 +0900