Article Effects of arsenic oxides on GaAs surfaces on photoluminescence properties of buried InGaAs quantum wells: Dependence on initial surfaces before oxidation

Zhao Ma SAMURAI ORCID ; Takaaki Mano SAMURAI ORCID ; Akihiro Ohtake SAMURAI ORCID ; Takashi Kuroda SAMURAI ORCID

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Zhao Ma, Takaaki Mano, Akihiro Ohtake, Takashi Kuroda. Effects of arsenic oxides on GaAs surfaces on photoluminescence properties of buried InGaAs quantum wells: Dependence on initial surfaces before oxidation. Journal of Applied Physics. 2025, 137 (24), . https://doi.org/10.1063/5.0274742

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(abstract)

We have studied the oxidation states and photoluminescence (PL) properties of GaAs(100) samples that incorporated buried InGaAs quantum well (QW) structures prepared by molecular-beam epitaxy (MBE). The surfaces of the MBE-grown GaAs(100) samples were controlled so that they were either As-rich c(4x4)α, Ga-rich (4x6) or Se-terminated (2x1) structures prior to oxidation. We found that the As/Ga composition ratio at the initial GaAs surface strongly affects the oxidation processes and the resultant PL properties.

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Keyword: GaAs, Surface, Termination, Oxide, Arsenic

Date published: 2025-06-28

Publisher: AIP Publishing

Journal:

  • Journal of Applied Physics (ISSN: 00218979) vol. 137 issue. 24

Funding:

  • ATLA (Acquisition, Technology and Logistics Agency)-Japan JPJ004596

Manuscript type: Publisher's version (Version of record)

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First published URL: https://doi.org/10.1063/5.0274742

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Updated at: 2025-06-27 16:30:25 +0900

Published on MDR: 2025-06-27 16:19:08 +0900

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