Download file (818 KB)
Download as zip (800 KB)

Collection

Citation

Description:

Two-dimensional layered semiconductors, i.e., germanium monosulfide (GeS), have been considered as one of the candidates for developing next-generation functional electronics and optoelectronics. Previously, lateral growth of GeS thin films using the pre-deposited amorphous GeS method and fabrication of GeS field-effect transistors (FETs) have been investigated. In this study, observation of the birefringent behavior in grown GeS thin films is demonstrated using the cross-polarizer of the optical microscope.

Rights:

• In Copyright
  

Keyword: GeS

Date published: 2025-01-23

Publisher: 電子デバイス界面テクノロジー研究会 –材料・プロセス・デバイス特性の物理–

Journal:

Conference: 第30回電子デバイス界面テクノロジー研究会 ― 材料・プロセス・デバイス特性の物理 ― (EDIT 30) (2025-01-22 - 2025-01-24)

Funding:

• JSPS JP20K14796
• JSPS JP23K13370
• JSPS JP24KF0164

Manuscript type: Author's version (Submitted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5405

First published URL: https://edit-ws.jp/program/

Related item:

Other identifier(s):

Contact agent:

Updated at: 2025-04-08 13:15:52 +0900

Published on MDR: 2025-04-07 22:19:36 +0900