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Hexagonal-boron-nitride single crystals grown by high-pressure, high-temperature (HPHT) synthesis are commonly used as the insulated substrate dielectric for two-dimensional (2D) atomic-layered materials like graphene and transition metal dichalcogenides (TMDs) to improve the flatness of the 2D materials atomically without disturbing the 2D electronic characteristics. However, HPHT single crystals often contain impure regions, which can hold subtle clues in regard to the 2D atomic layered materials for new discoveries in the physics of 2D materials. To identify the position of the impure domains and to avoid them when the 2D devices are prepared, a far-UV photoluminescence microscope was developed. This microscope makes it possible to visualize the impure growth region with ease in a no-contact and non-destructive manner.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Hexagonal-boron-nitride, 2D materials, photoluminescence microscope

刊行年月日: 2019-10-25

出版者: Springer Science and Business Media LLC

掲載誌:

• npj 2D Materials and Applications (ISSN: 23977132) vol. 3 issue. 1 40

研究助成金:

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1038/s41699-019-0124-4

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更新時刻: 2025-02-23 22:50:11 +0900

MDRでの公開時刻: 2025-02-23 22:50:11 +0900