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Description:

Hexagonal-boron-nitride single crystals grown by high-pressure, high-temperature (HPHT) synthesis are commonly used as the insulated substrate dielectric for two-dimensional (2D) atomic-layered materials like graphene and transition metal dichalcogenides (TMDs) to improve the flatness of the 2D materials atomically without disturbing the 2D electronic characteristics. However, HPHT single crystals often contain impure regions, which can hold subtle clues in regard to the 2D atomic layered materials for new discoveries in the physics of 2D materials. To identify the position of the impure domains and to avoid them when the 2D devices are prepared, a far-UV photoluminescence microscope was developed. This microscope makes it possible to visualize the impure growth region with ease in a no-contact and non-destructive manner.

Rights:

• Creative Commons BY Attribution 4.0 International
  

Keyword: Hexagonal-boron-nitride, 2D materials, photoluminescence microscope

Date published: 2019-10-25

Publisher: Springer Science and Business Media LLC

Journal:

• npj 2D Materials and Applications (ISSN: 23977132) vol. 3 issue. 1 40

Funding:

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1038/s41699-019-0124-4

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Updated at: 2025-02-23 22:50:11 +0900

Published on MDR: 2025-02-23 22:50:11 +0900