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Vertical three-dimensional integration of two-dimensional (2D) semiconductors holds great promise, as it offers the possibility to scale up logic layers in the z axis1,2,3. Indeed, vertical complementary field-effect transistors (CFETs) built with such mixed-dimensional heterostructures4,5, as well as hetero-2D layers with different carrier types6,7,8, have been demonstrated recently. However, so far, the lack of a controllable doping scheme (especially p-doped WSe2 (refs. 9,10,11,12,13,14,15,16,17) and MoS2 (refs. 11,18,19,20,21,22,23,24,25,26,27,28)) in 2D semiconductors, preferably in a stable and non-destructive manner, has greatly impeded the bottom-up scaling of complementary logic circuitries. Here we show that, by bringing transition metal dichalcogenides, such as MoS2, atop a van der Waals (vdW) antiferromagnetic insulator chromium oxychloride (CrOCl), the carrier polarity in MoS2 can be readily reconfigured from n- to p-type via strong vdW interfacial coupling. The consequential band alignment yields transistors with room-temperature hole mobilities up to approximately 425 cm2 V−1 s−1, on/off ratios reaching 106 and air-stable performance for over one year. Based on this approach, vertically constructed complementary logic, including inverters with 6 vdW layers, NANDs with 14 vdW layers and SRAMs with 14 vdW layers, are further demonstrated. Our findings of polarity-engineered p- and n-type 2D semiconductor channels with and without vdW intercalation are robust and universal to various materials and thus may throw light on future three-dimensional vertically integrated circuits based on 2D logic gates.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Polarity Engineering of 2D Semiconductors, Vertically Integrated Logic Circuits, van der Waals Interfacial Coupling

刊行年月日: 2024-06-13

出版者: Springer Science and Business Media LLC

掲載誌:

• Nature (ISSN: 00280836) vol. 630 issue. 8016 p. 346-352

研究助成金:

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1038/s41586-024-07438-5

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更新時刻: 2025-08-02 08:30:31 +0900

MDRでの公開時刻: 2025-08-02 08:17:30 +0900