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説明:

Infrared near-field spectroscopy, or nano-FTIR, offers nanoscale resolution in three dimensions to probe the chemical and physical properties of samples, making it a unique characterization tool. This nanoscopic resolution in three-dimension is particularly suitable to probe two-dimensional electron gas (2DEG) where a 2DEG has an effective thickness of a few nanometers and exists a few tens of nanometers below the capping layer. This work employs nano-FTIR spectroscopy to non-invasively probe the 2DEG of AlGaN/GaN heterostructures which are crucial for high-power electronic devices and sensing applications. Higher harmonic amplitude and phase of the nano-FTIR spectra are sensitive enough to the carrier concentration of the 2DEGs, which is supported by the analytical calculations based on the finite dipole model. A comparative analysis confirms that incorporating the 2DEG layer into the model is essential to match spectral features with experimental observations. Furthermore, hyperspectral imaging of a cross-sectional sample provides a visual representation of the 2DEG. The findings demonstrate that nano-FTIR enables the characterization of 2DEG in AlGaN/GaN heterostructures with nanometric resolution in ambient conditions, hence expanding its applicability in the study of such systems.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Two-dimensional electron gas, AlGaN/GaN, Nano-FTIR, Infrared spectroscopy

刊行年月日: 2025-09-03

出版者: American Chemical Society (ACS)

掲載誌:

• ACS Applied Materials & Interfaces (ISSN: 19448252) vol. 17 issue. 35 p. 50077-50084

研究助成金:

• Japan Society for the Promotion of Science 22H01917
• Japan Society for the Promotion of Science 24K21723
• Fusion Oriented REsearch for disruptive Science and Technology JPMJFR2139

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1021/acsami.5c12417

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更新時刻: 2025-11-10 12:30:06 +0900

MDRでの公開時刻: 2025-11-10 12:24:32 +0900