Ilario Bisignano
(National Institute for Materials Science)
;
Masataka Imura
(National Institute for Materials Science)
;
Nicholaus Kevin Tanjaya
(National Institute for Materials Science)
;
Ming-Jyun Ye
;
Noriyuki Okada
(National Institute for Materials Science)
;
Satoshi Ishii
(National Institute for Materials Science)
Description:
(abstract)Infrared near-field spectroscopy, or nano-FTIR, offers nanoscale resolution in three dimensions to probe the chemical and physical properties of samples, making it a unique characterization tool. This nanoscopic resolution in three-dimension is particularly suitable to probe two-dimensional electron gas (2DEG) where a 2DEG has an effective thickness of a few nanometers and exists a few tens of nanometers below the capping layer. This work employs nano-FTIR spectroscopy to non-invasively probe the 2DEG of AlGaN/GaN heterostructures which are crucial for high-power electronic devices and sensing applications. Higher harmonic amplitude and phase of the nano-FTIR spectra are sensitive enough to the carrier concentration of the 2DEGs, which is supported by the analytical calculations based on the finite dipole model. A comparative analysis confirms that incorporating the 2DEG layer into the model is essential to match spectral features with experimental observations. Furthermore, hyperspectral imaging of a cross-sectional sample provides a visual representation of the 2DEG. The findings demonstrate that nano-FTIR enables the characterization of 2DEG in AlGaN/GaN heterostructures with nanometric resolution in ambient conditions, hence expanding its applicability in the study of such systems.
Rights:
Keyword: Two-dimensional electron gas, AlGaN/GaN, Nano-FTIR, Infrared spectroscopy
Date published: 2025-09-03
Publisher: American Chemical Society (ACS)
Journal:
Funding:
Manuscript type: Publisher's version (Version of record)
MDR DOI:
First published URL: https://doi.org/10.1021/acsami.5c12417
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Updated at: 2025-11-10 12:30:06 +0900
Published on MDR: 2025-11-10 12:24:32 +0900
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