M. S. S. Khan
;
S. F. Mao
;
Y. B. Zou
;
Y. G. Li
;
B. Da
(National Institute for Materials Science
)
;
Z. J. Ding
Description:
(abstract)In recent years, precision and accuracy for a more precise critical dimension (CD) control have been required in CD measurement technology. CD distortion between the measurement by a critical dimension scanning electron microscope (CD-SEM) and a reference tool is the most important factor for a more accurate CD measurement. CD bias varies by a CD-SEM and a pattern condition. Therefore, it is urgently needed to identify, characterize, and quantify those parameters that may or may not affect the CD measurement by a CD-SEM. The sensitivity of the Monte Carlo simulated CD-SEM images with multiple physical modeling components has been studied previously. In this study, we demonstrate that the work function and elastic scattering potential models have a significant impact on secondary electron emission intensity, but their influence on the shape of the linescan profile is small, and other factors like the optical energy loss function and dielectric function models have even smaller effects.
Rights:
Published under an exclusive license by AIP Publishing
Keyword: Monte Carlo
Date published: 2023-06-28
Publisher: AIP Publishing
Journal:
Funding:
Manuscript type: Publisher's version (Version of record)
MDR DOI:
First published URL: https://doi.org/10.1063/5.0153379
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Other identifier(s):
Contact agent:
Updated at: 2024-11-07 16:30:44 +0900
Published on MDR: 2024-11-07 16:30:44 +0900
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