M. S. S. Khan
;
S. F. Mao
;
Y. B. Zou
;
Y. G. Li
;
B. Da
(National Institute for Materials Science
)
;
Z. J. Ding
説明:
(abstract)In recent years, precision and accuracy for a more precise critical dimension (CD) control have been required in CD measurement technology. CD distortion between the measurement by a critical dimension scanning electron microscope (CD-SEM) and a reference tool is the most important factor for a more accurate CD measurement. CD bias varies by a CD-SEM and a pattern condition. Therefore, it is urgently needed to identify, characterize, and quantify those parameters that may or may not affect the CD measurement by a CD-SEM. The sensitivity of the Monte Carlo simulated CD-SEM images with multiple physical modeling components has been studied previously. In this study, we demonstrate that the work function and elastic scattering potential models have a significant impact on secondary electron emission intensity, but their influence on the shape of the linescan profile is small, and other factors like the optical energy loss function and dielectric function models have even smaller effects.
権利情報:
Published under an exclusive license by AIP Publishing
キーワード: Monte Carlo
刊行年月日: 2023-06-28
出版者: AIP Publishing
掲載誌:
研究助成金:
原稿種別: 出版者版 (Version of record)
MDR DOI:
公開URL: https://doi.org/10.1063/5.0153379
関連資料:
その他の識別子:
連絡先:
更新時刻: 2024-11-07 16:30:44 +0900
MDRでの公開時刻: 2024-11-07 16:30:44 +0900
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