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Description:

Two-dimensional (2D) transistors are promising for potential applications in next-generation semiconductor chips. Owing to the atomically thin thickness of 2D materials, the carrier scattering from interfacial Coulomb scatterers greatly suppresses the carrier mobility and hampers transistor performance. However, a feasible method to quantitatively determine relevant Coulomb scattering parameters from interfacial long-range scatterers is largely lacking. Here, we demonstrate a method to determine the Coulomb scattering strength and the density of Coulomb scattering centers in InSe transistors by comprehensively analyzing the low-frequency noise and transport characteristics. Moreover, the relative contributions from long-range and short-range scattering in the InSe transistors can be distinguished. This method is employed to make InSe transistors consisting of various interfaces a model system, revealing the profound effects of different scattering sources on transport characteristics and low-frequency noise. Quantitatively accessing the scattering parameters of 2D transistors provides valuable insight into engineering the interfaces of a wide spectrum of ultrathin-body transistors for high-performance electronics.

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• In Copyright
  This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials & Interfaces, copyright © 2023 American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsami.3c14312.

Keyword: electron scattering, 2D materials, Coulomb scattering strength, low-frequency noise, indium selenide, interfacial Coulomb scatterers, 2D transist

Date published: 2024-01-10

Publisher: American Chemical Society (ACS)

Journal:

• ACS Applied Materials & Interfaces (ISSN: 19448252) vol. 16 issue. 1 p. 1066-1073

Funding:

• Academia Sinica AS-iMATE-109-13
• Japan Society for the Promotion of Science 20H00354
• Japan Society for the Promotion of Science 21H05233
• Japan Society for the Promotion of Science 23H02052
• National Science and Technology Council 109-2112-M-001-041-MY3
• National Science and Technology Council 110-2112-M-A49- 033-MY3
• National Science and Technology Council 110-2112-M001-065-MY3
• National Science and Technology Council 111-2119- M-007-005
• National Science and Technology Council 112-2119-M-002-014
• National Science and Technology Council 110-2112-M-A49-015
• Ministry of Education, Taiwan
• World Premier International Research Center Initiative

Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5809

First published URL: https://doi.org/10.1021/acsami.3c14312

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Updated at: 2025-10-21 15:50:45 +0900

Published on MDR: 2025-10-21 15:43:32 +0900