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Description:

Extensive research has been conducted on wide-bandgap semiconductor diamond for the advancement of high-power, high-frequency, and high-temperature electronic devices. The author has established long-term collaboration with Prof. Koide, focusing on producing p-type hydrogen-terminated diamond (H-diamond) and boron-doped oxygen-terminated diamond (O-diamond) based metal-oxide-semiconductor field-effect transistors (MOSFETs). This paper presents our primary research findings on the fabrication of enhancement-mode H-diamond MOSFETs and MOSFET logic circuits, as well as the high-temperature operation of the boron-doped O-diamond MOSFETs.

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• In Copyright
  

Keyword: diamond

Date published: 2025-12-31

Publisher: Informa UK Limited

Journal:

• Functional Diamond (ISSN: 26941112) vol. 5 issue. 1 2551496

Funding:

• Japan Society for the Promotion of Science JP23K03966
• Ministry of Education, Culture, Sports, Science and Technology ARIM (23WS0311 and 23NM5006)
• U.S. Army Research Office, under the direction W911NF‐223‐1‐0267
• Lynn J. Petersen

Manuscript type: Author's version (Submitted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5848

First published URL: https://doi.org/10.1080/26941112.2025.2551496

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Updated at: 2025-10-31 12:30:17 +0900

Published on MDR: 2025-10-31 12:24:36 +0900