Download file (4.18 MB)
Download as zip (3.76 MB)

Collection

Citation

Description:

{100}-Oriented epitaxial orthorhombic (Hf0.93Y0.07)O2 (7YHO) films were grown at 700 °C on various substrates, with and without (Ce0.35Zr0.65)O2 (CZO) buffer layers, by using pulsed laser deposition. The crystal phase and orientation were determined by X-ray diffraction. The long axis [100] or short axis [010]/[001] orientations were controlled by lattice matching. Nearly relaxed epitaxial orthorhombic (100) 7YHO films on LaAlO3 and SrRuO3/SrTiO3 substrates were obtained, and their unclamped lattice constants were experimentally observed. The in-plane lattice parameter of the (010)/(001)-oriented 7YHO films obtained by using the CZO buffer layers was within the range of 0.518–0.523 nm. This study demonstrates selective growth and lattice strain control with respect to the in-plane lattice spacing of the underlying layers. These findings provide further possibilities for understanding the fundamental ferroelectric properties of HfO2-based materials.

Rights:

• Creative Commons BY Attribution 4.0 International
  

Keyword: Ferroelectric HfO2-based film, Epitaxial film, {100} Orientation control, Polar axis orientation, Pulse laser deposition

Date published: 2024-07-25

Publisher: American Chemical Society (ACS)

Journal:

• ACS Applied Electronic Materials (ISSN: 26376113) vol. 6 issue. 8 p. 5525-5535

Funding:

• Ministry of Education, Culture, Sports, Science and Technology JPJ011438
• Ministry of Education, Culture, Sports, Science and Technology JPMXP1122683430
• Japan Society for the Promotion of Science 21H01617
• Japan Society for the Promotion of Science 22K18307
• Japan Society for the Promotion of Science 23K13364

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1021/acsaelm.4c00368

Related item:

Other identifier(s):

Contact agent:

Updated at: 2024-12-24 13:58:35 +0900

Published on MDR: 2024-12-24 13:58:35 +0900