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{100}-Oriented epitaxial orthorhombic (Hf0.93Y0.07)O2 (7YHO) films were grown at 700 °C on various substrates, with and without (Ce0.35Zr0.65)O2 (CZO) buffer layers, by using pulsed laser deposition. The crystal phase and orientation were determined by X-ray diffraction. The long axis [100] or short axis [010]/[001] orientations were controlled by lattice matching. Nearly relaxed epitaxial orthorhombic (100) 7YHO films on LaAlO3 and SrRuO3/SrTiO3 substrates were obtained, and their unclamped lattice constants were experimentally observed. The in-plane lattice parameter of the (010)/(001)-oriented 7YHO films obtained by using the CZO buffer layers was within the range of 0.518–0.523 nm. This study demonstrates selective growth and lattice strain control with respect to the in-plane lattice spacing of the underlying layers. These findings provide further possibilities for understanding the fundamental ferroelectric properties of HfO2-based materials.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Ferroelectric HfO2-based film, Epitaxial film, {100} Orientation control, Polar axis orientation, Pulse laser deposition

刊行年月日: 2024-07-25

出版者: American Chemical Society (ACS)

掲載誌:

• ACS Applied Electronic Materials (ISSN: 26376113) vol. 6 issue. 8 p. 5525-5535

研究助成金:

• Ministry of Education, Culture, Sports, Science and Technology JPJ011438
• Ministry of Education, Culture, Sports, Science and Technology JPMXP1122683430
• Japan Society for the Promotion of Science 21H01617
• Japan Society for the Promotion of Science 22K18307
• Japan Society for the Promotion of Science 23K13364

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1021/acsaelm.4c00368

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更新時刻: 2024-12-24 13:58:35 +0900

MDRでの公開時刻: 2024-12-24 13:58:35 +0900