Yong-Lie Sun
(National Institute for Materials Science
)
;
Wipakorn Jevasuwan
(National Institute for Materials Science
)
;
Naoki Fukata
(National Institute for Materials Science
)
Description:
(abstract)トップダウン手法を利用してGeナノワイヤの配列制御と縦型トランジスタチャネル実現のためのGe/Siコアシェルヘテロ接合形成に関する研究成果
Rights:
© 2023. Licensed under the Creative Commons https://creativecommons.org/licenses/by-nc-nd/4.0/
Keyword: Ge nanowire, Nanoimprint lithography, Hole gas, Core–shell
Date published: 2023-10-11
Publisher: Elsevier BV
Journal:
Funding:
Manuscript type: Author's version (Accepted manuscript)
MDR DOI: https://doi.org/10.48505/nims.4678
First published URL: https://doi.org/10.1016/j.apsusc.2023.158656
Related item:
Other identifier(s):
Contact agent:
Updated at: 2025-10-21 15:50:34 +0900
Published on MDR: 2025-10-21 15:45:52 +0900
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Top-down fabrication of Ge nanowire arrays by nanoimprint lithography and hole gas accumulation in GeSi core–shell nanowires.pdf
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