Top-down fabrication of Ge nanowire arrays by nanoimprint lithography and hole gas accumulation in Ge/Si core–shell nanowires

Yong-Lie Sun; Wipakorn Jevasuwan; Naoki Fukata

doi:10.1016/j.apsusc.2023.158656

論文 Top-down fabrication of Ge nanowire arrays by nanoimprint lithography and hole gas accumulation in Ge/Si core–shell nanowires

Yong-Lie Sun (National Institute for Materials Science) ; Wipakorn Jevasuwan (National Institute for Materials Science) ; Naoki Fukata (National Institute for Materials Science)

Top-down fabrication of Ge nanowire arrays by nanoimprint lithography and hole gas accumulation in GeSi core–shell nanowires.pdf

Download file (1.3MB)
Download as zip (1.26MB)

コレクション

引用

Yong-Lie Sun, Wipakorn Jevasuwan, Naoki Fukata. Top-down fabrication of Ge nanowire arrays by nanoimprint lithography and hole gas accumulation in Ge/Si core–shell nanowires. Applied Surface Science. 2023, 643 (), 158656. https://doi.org/10.1016/j.apsusc.2023.158656

(BibTeX)

説明:

(abstract)

トップダウン手法を利用してGeナノワイヤの配列制御と縦型トランジスタチャネル実現のためのGe/Siコアシェルヘテロ接合形成に関する研究成果

権利情報:

Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
© 2023. Licensed under the Creative Commons https://creativecommons.org/licenses/by-nc-nd/4.0/

キーワード: Ge nanowire, Nanoimprint lithography, Hole gas, Core–shell

刊行年月日: 2023-10-11

出版者: Elsevier BV

掲載誌:

Applied Surface Science (ISSN: 01694332) vol. 643 158656

研究助成金:

Japan Society for the Promotion of Science 21J11537
Ministry of Education, Culture, Sports, Science and Technology

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4678

公開URL: https://doi.org/10.1016/j.apsusc.2023.158656

関連資料:

その他の識別子:

連絡先:

更新時刻: 2025-10-21 15:50:34 +0900

MDRでの公開時刻: 2025-10-21 15:45:52 +0900

ファイル名	サイズ
ファイル名	Top-down fabrication of Ge nanowire arrays by nanoimprint lithography and hole gas accumulation in GeSi core–shell nanowires.pdf (サムネイル) application/pdf	サイズ	1.3MB	詳細