Download file (634KB)
Download as zip (611KB)

コレクション

引用

説明:

Wurtzite-type aluminum scandium nitride (WZ-(Al1−xScx)N) thin films were grown on Nb 0.5wt% doped SrTiO3(111) (Nb:STO) single crystal substrates by radio frequency reactive magnetron sputtering method with Al and Sc targets. It was confirmed that WZ-(Al1−xScx)N thin films was epitaxially grown on Nb:STO substrates for 00.3 were single-crystal like single domain films. Although rotation domains were formed. Although lattice parameters and domain structure changed with x in complicated manner, the evaluated unit-cell volume was in good accordance with Vegard's law. Those results indicated that unit-cell volume was simply governed by chemical composition, x.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: (Al,Sc)N, Epitaxial films, magnetron sputtering, strontium titanate, lattice mismatch, lattice orientation, Scandium Aluminate

刊行年月日: 2023-07-01

出版者: Ceramic Society of Japan

掲載誌:

• Journal of the Ceramic Society of Japan (ISSN: 13486535) vol. 131 issue. 7 p. 242-247 23002

研究助成金:

• MEXT JPMXP0112101001
• MEXT JPMXP1122683430

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.2109/jcersj2.23002

関連資料:

その他の識別子:

連絡先:

更新時刻: 2025-04-14 16:30:51 +0900

MDRでの公開時刻: 2025-04-14 14:56:20 +0900