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Wurtzite-type aluminum scandium nitride (WZ-(Al1−xScx)N) thin films were grown on Nb 0.5wt% doped SrTiO3(111) (Nb:STO) single crystal substrates by radio frequency reactive magnetron sputtering method with Al and Sc targets. It was confirmed that WZ-(Al1−xScx)N thin films was epitaxially grown on Nb:STO substrates for 00.3 were single-crystal like single domain films. Although rotation domains were formed. Although lattice parameters and domain structure changed with x in complicated manner, the evaluated unit-cell volume was in good accordance with Vegard's law. Those results indicated that unit-cell volume was simply governed by chemical composition, x.

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• Creative Commons BY Attribution 4.0 International
  

Keyword: (Al,Sc)N, Epitaxial films, magnetron sputtering, strontium titanate, lattice mismatch, lattice orientation, Scandium Aluminate

Date published: 2023-07-01

Publisher: Ceramic Society of Japan

Journal:

• Journal of the Ceramic Society of Japan (ISSN: 13486535) vol. 131 issue. 7 p. 242-247 23002

Funding:

• MEXT JPMXP0112101001
• MEXT JPMXP1122683430

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.2109/jcersj2.23002

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Updated at: 2025-04-14 16:30:51 +0900

Published on MDR: 2025-04-14 14:56:20 +0900