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説明:

We report the demonstration of fully vertical AlN Schottky barrier diodes using n-type SiC substrates. We show that Schottky-barrier diodes (SBDs) and metal-semiconductor field-effect transistors with Si-implanted AlN channels can operate at 1100 K and 1000 K, respectively. The breakdown voltage and barrier height of the AlN SBD were 610 V and 3.5 eV, respectively. We found that the high barrier height and thermal stability of the Ni contact on AlN greatly contributed to high-temperature operation of the devices.

権利情報:

• Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
  

  This is the Accepted Manuscript version of an article accepted for publication in Japanese Journal of Applied Physics. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.35848/1347-4065/ad7dc3.

キーワード: AlN, 4H-SiC, Schottky barrier diodes

刊行年月日: 2024-10-01

出版者: IOP Publishing

掲載誌:

• Japanese Journal of Applied Physics (ISSN: 00214922) vol. 63 issue. 10 100903

研究助成金:

• JSPS 23K21082
• JSPS 23K26556

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5027

公開URL: https://doi.org/10.35848/1347-4065/ad7dc3

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更新時刻: 2025-10-21 15:50:30 +0900

MDRでの公開時刻: 2025-10-21 15:43:31 +0900