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We report the demonstration of fully vertical AlN Schottky barrier diodes using n-type SiC substrates. We show that Schottky-barrier diodes (SBDs) and metal-semiconductor field-effect transistors with Si-implanted AlN channels can operate at 1100 K and 1000 K, respectively. The breakdown voltage and barrier height of the AlN SBD were 610 V and 3.5 eV, respectively. We found that the high barrier height and thermal stability of the Ni contact on AlN greatly contributed to high-temperature operation of the devices.

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• Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
  

  This is the Accepted Manuscript version of an article accepted for publication in Japanese Journal of Applied Physics. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.35848/1347-4065/ad7dc3.

Keyword: AlN, 4H-SiC, Schottky barrier diodes

Date published: 2024-10-01

Publisher: IOP Publishing

Journal:

• Japanese Journal of Applied Physics (ISSN: 00214922) vol. 63 issue. 10 100903

Funding:

• JSPS 23K21082
• JSPS 23K26556

Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5027

First published URL: https://doi.org/10.35848/1347-4065/ad7dc3

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Updated at: 2025-10-21 15:50:30 +0900

Published on MDR: 2025-10-21 15:43:31 +0900