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代替タイトル: (010) beta-Ga2O3基板上にコヒレント成長したbeta-(AlxGa1-x)2O3薄膜の高分解能XRDによる組成決定

説明:

We demonstrate x-ray diffraction based composition estimation of b-(AlxGa1-x)2O3 coherently grown on (010) b-Ga2O3. The relation between the strain along the [010] direction and the Al composition of the b-(AlxGa1-x)2O3 layer was formulated by using stress-strain relationship in the monoclinic system. This formulation allows us to estimate the Al composition using out-of-plane lattice spacing determined by conventional x-ray omega-2theta measurements. This method was applied to MBE-grown coherent b-(AlxGa1-x)2O3/Ga2O3 heterostructures, and the Al composition in the b-(AlxGa1-x)2O3 are in close agreement with composition determined directly by atom probe tomography.

権利情報:

• In Copyright
  

  @2016 The Japan Society of Applied Physics
  
  This is an author-created, un-copyedited version of an article accepted for publication/published in Applied Physics Express. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.7567/APEX.9.061102.

キーワード: β-Ga2O3, composition, atom probe

刊行年月日: 2016-06-01

出版者: IOP Publishing

掲載誌:

• APPLIED PHYSICS EXPRESS (ISSN: 18820778) vol. 9 issue. 6 p. 61102-61102

研究助成金:

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4327

公開URL: https://doi.org/10.7567/APEX.9.061102

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更新時刻: 2024-01-24 09:26:50 +0900

MDRでの公開時刻: 2024-01-12 08:30:11 +0900