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As integrated circuits continue to scale down, the search for alternative metals is becoming increasingly important due to the rising resistivity
of traditional copper-based interconnects. A layered oxide PdCoO2 is one of the candidate materials for interconnects, having bulk ab-plane
conductivity exceeding that of elemental Al. Despite its potential, wafer-scale vacuum deposition of PdCoO2, crucial for interconnect applications,
has not yet been reported. In this study, we demonstrate the scalable growth of c-axis oriented PdCoO2 thin films via reactive sputtering
from Pd-Co alloy targets. Our method paves the way to harness the unique properties of PdCoO2 in semiconductor devices.

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  This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Takayuki Harada, Zuin Ping Lily Ang, Yuki Sakakibara, Takuro Nagai, Yasushi Masahiro; Scalable alloy-based sputtering of high-conductivity PdCoO2 for advanced interconnects. Appl. Phys. Lett. 2 June 2025; 126 (22): 221902 and may be found at https://doi.org/10.1063/5.0260219.

Keyword: Interconnect, Thin films, Conductive material, Low dimensional materials, Electronic materials

Date published: 2025-06-02

Publisher: AIP Publishing

Journal:

• Applied Physics Letters (ISSN: 00036951) vol. 126 issue. 22

Funding:

• Precursory Research for Embryonic Science and Technology JPMJPR20AD
• Japan Society for the Promotion of Science London 24K01353

Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5528

First published URL: https://doi.org/10.1063/5.0260219

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Updated at: 2025-06-10 08:30:11 +0900

Published on MDR: 2025-06-10 08:19:16 +0900