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説明:

As integrated circuits continue to scale down, the search for alternative metals is becoming increasingly important due to the rising resistivity
of traditional copper-based interconnects. A layered oxide PdCoO2 is one of the candidate materials for interconnects, having bulk ab-plane
conductivity exceeding that of elemental Al. Despite its potential, wafer-scale vacuum deposition of PdCoO2, crucial for interconnect applications,
has not yet been reported. In this study, we demonstrate the scalable growth of c-axis oriented PdCoO2 thin films via reactive sputtering
from Pd-Co alloy targets. Our method paves the way to harness the unique properties of PdCoO2 in semiconductor devices.

権利情報:

• In Copyright
  This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Takayuki Harada, Zuin Ping Lily Ang, Yuki Sakakibara, Takuro Nagai, Yasushi Masahiro; Scalable alloy-based sputtering of high-conductivity PdCoO2 for advanced interconnects. Appl. Phys. Lett. 2 June 2025; 126 (22): 221902 and may be found at https://doi.org/10.1063/5.0260219.

キーワード: Interconnect, Thin films, Conductive material, Low dimensional materials, Electronic materials

刊行年月日: 2025-06-02

出版者: AIP Publishing

掲載誌:

• Applied Physics Letters (ISSN: 00036951) vol. 126 issue. 22

研究助成金:

• Precursory Research for Embryonic Science and Technology JPMJPR20AD
• Japan Society for the Promotion of Science London 24K01353

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5528

公開URL: https://doi.org/10.1063/5.0260219

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更新時刻: 2025-06-10 08:30:11 +0900

MDRでの公開時刻: 2025-06-10 08:19:16 +0900