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説明:

Solid-state spin defects provide a versatile platform for quantum sensing with nanoscale spatial resolution and room-temperature operation. Spin defects in diamond have enabled mature scanning-probe devices, while related defects in silicon carbide and hexagonal boron nitride are being actively explored for scalable sensing platforms. However, the sensitivity of practical and scanning-probe devices remains below that of optimized bulk systems. Although optical fluorescence detection is widely used, practical performance is often constrained by limitations in signal acquisition and readout efficiency, motivating continued efforts to improve readout technologies. This review surveys material platforms and optical and photoelectrical readout technologies for solid-state spin defects. We compare fluorescence- and photoelectric-based detection schemes in terms of readout fidelity, sensitivity, and scalability, and discuss how materials properties and carrier transport influence practical performance. These perspectives provide guidelines for improving readout efficiency and advancing high-sensitivity quantum sensors and scanning probes.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Solid-state quantum sensor, quantum spin, diamond, silicon carbide, photoelectrical detection, quantum scanning probe

刊行年月日: 2026-12-31

出版者: Taylor & Francis

掲載誌:

• Science and Technology of Advanced Materials (ISSN: 14686996) vol. 27 issue. 1 2691682

研究助成金:

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.6474

公開URL: https://doi.org/10.1080/14686996.2026.2691682

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更新時刻: 2026-08-24 14:30:47 +0900

MDRでの公開時刻: 2026-08-24 16:27:38 +0900