Download file (13.1 MB)
Download as zip (5.36 MB)

Collection

Citation

Description:

This work proposes a simple simulation method for the optimization of n-i-p perovskite solar cell (PSCs) via SCAPS-1D and aims to achieve highperformance devices. Nowadays, the carrier recombination induced by heavy defects in bulk and interfaces is one of the main obstacles which
restricts PSC efficiency and is also harmful to device stability. Here we modify the MAPbI3 device through a series of structural and basic optimizations, including the thickness of each layer, carrier diffusion length, interface recombination, doping concentration and overall series resistance. Through the modified simulation, a high-performance MAPbI3 device with suppressed recombination and optimized structure is realized, resulting in an encouraging power conversion efficiency of 20.09%, an enhanced Voc of 1.087 V, Jsc of 22.56 mA cm−2 and an FF of
78.5%. These findings unveil the critical effect of defect suppression on PSCs and offer a simple method to achieve high-performance devices.

Rights:

• Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
  

Keyword: perovskite solar cells, Numerical investigation, SCAPS-1D

Date published: 2023-08-01

Publisher: IOP Publishing

Journal:

• Japanese Journal of Applied Physics (ISSN: 13474065) vol. 62 SK1052

Funding:

Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5137

First published URL: https://doi.org/10.35848/1347-4065/acd38c

Related item:

Other identifier(s):

Contact agent:

Updated at: 2024-12-11 16:30:37 +0900

Published on MDR: 2024-12-11 16:30:38 +0900