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説明:

This work proposes a simple simulation method for the optimization of n-i-p perovskite solar cell (PSCs) via SCAPS-1D and aims to achieve highperformance devices. Nowadays, the carrier recombination induced by heavy defects in bulk and interfaces is one of the main obstacles which
restricts PSC efficiency and is also harmful to device stability. Here we modify the MAPbI3 device through a series of structural and basic optimizations, including the thickness of each layer, carrier diffusion length, interface recombination, doping concentration and overall series resistance. Through the modified simulation, a high-performance MAPbI3 device with suppressed recombination and optimized structure is realized, resulting in an encouraging power conversion efficiency of 20.09%, an enhanced Voc of 1.087 V, Jsc of 22.56 mA cm−2 and an FF of
78.5%. These findings unveil the critical effect of defect suppression on PSCs and offer a simple method to achieve high-performance devices.

権利情報:

• Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
  

キーワード: perovskite solar cells, Numerical investigation, SCAPS-1D

刊行年月日: 2023-08-01

出版者: IOP Publishing

掲載誌:

• Japanese Journal of Applied Physics (ISSN: 13474065) vol. 62 SK1052

研究助成金:

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5137

公開URL: https://doi.org/10.35848/1347-4065/acd38c

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更新時刻: 2024-12-11 16:30:37 +0900

MDRでの公開時刻: 2024-12-11 16:30:38 +0900