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We have studied the direct growth of GaN film on AlN template /sapphire substrate by using metalorganic chemical vapor deposition. It is found that GaN growing layer causes the deformation of the under-layer of AlN template drastically at the initial growth. The intensity of x-ray diffraction from AlN drops by a factor of 5, and the values of full-width at half maximum of rocking curve of on- and off-axis planes are increased from 50 to 300 arcsec. With increase of GaN growth time, these values are gradually recovered, and crystalline quality of GaN film is improved. No alloying formation is observed at the interface AlN and GaN. AlN template on sapphire substrate seems to work just like a buffer layer, adjusting the lattice constant to improve the quality of direct GaN growth. Compared to GaN film grown on sapphire substrate, GaN grown directly on AlN temp forms smoother surface and better crystalline quality for shorter growth time at lower temperature, exhibiting the lower non-radiative defects in the band gap.

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• In Copyright
  

Keyword: GaN film growth, AlN template

Date published: 2019-11-27

Publisher: Elsevier BV

Journal:

• Journal of Crystal Growth (ISSN: 00220248) vol. 532 125376

Funding:

• JSPS KAKENHI 16H06424

Manuscript type: Author's version (Submitted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5134

First published URL: https://doi.org/10.1016/j.jcrysgro.2019.125376

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Updated at: 2024-12-10 16:56:42 +0900

Published on MDR: 2024-12-10 16:56:43 +0900