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We have studied the direct growth of GaN film on AlN template /sapphire substrate by using metalorganic chemical vapor deposition. It is found that GaN growing layer causes the deformation of the under-layer of AlN template drastically at the initial growth. The intensity of x-ray diffraction from AlN drops by a factor of 5, and the values of full-width at half maximum of rocking curve of on- and off-axis planes are increased from 50 to 300 arcsec. With increase of GaN growth time, these values are gradually recovered, and crystalline quality of GaN film is improved. No alloying formation is observed at the interface AlN and GaN. AlN template on sapphire substrate seems to work just like a buffer layer, adjusting the lattice constant to improve the quality of direct GaN growth. Compared to GaN film grown on sapphire substrate, GaN grown directly on AlN temp forms smoother surface and better crystalline quality for shorter growth time at lower temperature, exhibiting the lower non-radiative defects in the band gap.

権利情報:

• In Copyright
  

キーワード: GaN film growth, AlN template

刊行年月日: 2019-11-27

出版者: Elsevier BV

掲載誌:

• Journal of Crystal Growth (ISSN: 00220248) vol. 532 125376

研究助成金:

• JSPS KAKENHI 16H06424

原稿種別: 査読前原稿 (Author's original)

MDR DOI: https://doi.org/10.48505/nims.5134

公開URL: https://doi.org/10.1016/j.jcrysgro.2019.125376

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更新時刻: 2024-12-10 16:56:42 +0900

MDRでの公開時刻: 2024-12-10 16:56:43 +0900