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The electrostatic potential distribution in materials and devices plays an important role in controlling the behaviors of charge carriers. Kelvin probe force microscopy (KPFM) is a powerful technique for measuring the surface potential at a high spatial resolution. However, the measured surface potential often deviates from the potential deep in the bulk owing to certain factors. Here, we performed KPFM measurements across the p-n junction, in which such factors were eliminated as much as possible by selecting the sample, force sensor, and measurement mode. The measured surface potential distribution agrees well with the line shape of the simulated bulk potential. Our results demonstrate that KPFM is capable of quantitatively characterizing potential distributions whose changes occur on the order of 10 nm.

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• In Copyright
  

  This is the version of the article before peer review or editing, as submitted by an author to Nanotechnology .  IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it.  The Version of Record is available online at https://doi.org/10.1088/1361-6528/ad0b5e.

Keyword: GaAs(110), Kelvin probe force microscopy, p-n junction, qPlus sensor

Date published: 2024-02-05

Publisher: IOP Publishing

Journal:

• Nanotechnology (ISSN: 13616528) vol. 35 issue. 6 065708

Funding:

• Japan Society for the Promotion of Science JSPS KAKENHI Grant Numbers JP17K06366

Manuscript type: Author's version (Submitted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4463

First published URL: https://doi.org/10.1088/1361-6528/ad0b5e

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Updated at: 2024-04-04 08:30:11 +0900

Published on MDR: 2024-04-04 08:30:11 +0900