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説明:

The electrostatic potential distribution in materials and devices plays an important role in controlling the behaviors of charge carriers. Kelvin probe force microscopy (KPFM) is a powerful technique for measuring the surface potential at a high spatial resolution. However, the measured surface potential often deviates from the potential deep in the bulk owing to certain factors. Here, we performed KPFM measurements across the p-n junction, in which such factors were eliminated as much as possible by selecting the sample, force sensor, and measurement mode. The measured surface potential distribution agrees well with the line shape of the simulated bulk potential. Our results demonstrate that KPFM is capable of quantitatively characterizing potential distributions whose changes occur on the order of 10 nm.

権利情報:

• In Copyright
  

  This is the version of the article before peer review or editing, as submitted by an author to Nanotechnology .  IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it.  The Version of Record is available online at https://doi.org/10.1088/1361-6528/ad0b5e.

キーワード: GaAs(110), Kelvin probe force microscopy, p-n junction, qPlus sensor

刊行年月日: 2024-02-05

出版者: IOP Publishing

掲載誌:

• Nanotechnology (ISSN: 13616528) vol. 35 issue. 6 065708

研究助成金:

• Japan Society for the Promotion of Science JSPS KAKENHI Grant Numbers JP17K06366

原稿種別: 査読前原稿 (Author's original)

MDR DOI: https://doi.org/10.48505/nims.4463

公開URL: https://doi.org/10.1088/1361-6528/ad0b5e

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更新時刻: 2024-04-04 08:30:11 +0900

MDRでの公開時刻: 2024-04-04 08:30:11 +0900