説明:
(abstract)The development of terahertz-sensing technologies has been limited by the lack of sensitive, broadband and fast terahertz detectors. Thermal bolometers are bulky and slow, whereas electronic terahertz detectors (such as Schottky diodes) are fast, but their sensitivity degrades quickly outside a narrow frequency window. Here, we show that a two-dimensional correlated topological semimetal, tantalum iridium telluride (TaIrTe4), has a large room-temperature nonlinear Hall effect and that the interaction between this effect and terahertz nonlinear electrodynamics can be used as a mechanism for terahertz sensing. Our photodetectors exhibit a high sensitivity (noise-equivalent power of around 1 pW Hz−1/2) and a large zero-bias responsivity (around 0.3 A W−1) over a broadband spectral range (0.1–10 THz) at room temperature with an intrinsic ultrafast response time (picoseconds). The zero-bias responsivity and noise-equivalent power performance can be further improved (to 18 A W−1 and 0.05 pW Hz−1/2, respectively) by introducing gate-tunable electron correlations.
権利情報:
This version of the article has been accepted for publication, after peer review (when applicable) and is subject to Springer Nature’s AM terms of use, but is not the Version of Record and does not reflect post-acceptance improvements, or any corrections. The Version of Record is available online at: https://doi.org/10.1038/s41928-025-01397-z.
キーワード: Terahertz detection, Nonlinear Hall effect, Topological semimetal
刊行年月日: 2025-06-12
出版者: Springer Science and Business Media LLC
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研究助成金:
原稿種別: 著者最終稿 (Accepted manuscript)
MDR DOI:
公開URL: https://doi.org/10.1038/s41928-025-01397-z
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更新時刻: 2026-07-03 11:38:29 +0900
MDRでの公開時刻: 2026-07-03 14:29:36 +0900
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2025A01779G_Manuscript_accepted version.pdf
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