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The last decade has seen a flurry of studies related to graphene nanoribbons due to their potential applications in the quantum realm. However, little experimental work has been done towards nanoribbons of other 2D materials due to the absence of synthesis routes. Furthermore, 2D material nanoribbon fabrication methods need to be scalable, while maintaining high crystallinity, sufficient yield, narrow size dis- tribution, and straight-forward device integrability.We apply a universal approach to synthesize high-quality networks of nanoribbons from arbitrary 2D materials. The wide applicability of this technique is demonstrated by fabricating MoS2, WS2, WSe2, and graphene nanoribbon field effect transistors that inherently do not suffer from in- terconnection resistances and network percolation issues. By relying on self-assembled and self-aligned organic nanostructures as masks, we demonstrate the possibility of controlling the predominant crystallographic direction of the nanoribbon's edges. Obtained nanoribbons demonstrate excellent optical and electronic properties inherent to their single crystalline structure. Electrical characterization shows record mobil- ities and very high ON currents for various TMDCs despite extreme width scaling (< 20 nm). Lastly, we explore decoration of nanoribbon edges with plasmonic particles paving the way towards the development of nanoribbon based plasmonic sensing and opto-electronic devices.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Graphene nanoribbons, quantum realm, opto-electronic devices

刊行年月日: 2022-10-31

出版者: Springer Science and Business Media LLC

掲載誌:

• npj 2D Materials and Applications (ISSN: 23977132) vol. 6 issue. 1 76

研究助成金:

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1038/s41699-022-00356-y

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更新時刻: 2025-02-28 08:30:55 +0900

MDRでの公開時刻: 2025-02-28 08:30:55 +0900