Single-crystalline nanoribbon network field effect transistors from arbitrary two-dimensional materials

Muhammad Awais Aslam; Tuan Hoang Tran; Antonio Supina; Olivier Siri; Vincent Meunier; Kenji Watanabe; Takashi Taniguchi; Marko Kralj; Christian Teichert; Evgeniya Sheremet; Raul D. Rodriguez; Aleksandar Matković

doi:10.1038/s41699-022-00356-y

Article Single-crystalline nanoribbon network field effect transistors from arbitrary two-dimensional materials

Muhammad Awais Aslam ; Tuan Hoang Tran ; Antonio Supina ; Olivier Siri ; Vincent Meunier ; Kenji Watanabe (National Institute for Materials Science) ; Takashi Taniguchi (National Institute for Materials Science) ; Marko Kralj ; Christian Teichert ; Evgeniya Sheremet ; Raul D. Rodriguez ; Aleksandar Matković

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Muhammad Awais Aslam, Tuan Hoang Tran, Antonio Supina, Olivier Siri, Vincent Meunier, Kenji Watanabe, Takashi Taniguchi, Marko Kralj, Christian Teichert, Evgeniya Sheremet, Raul D. Rodriguez, Aleksandar Matković. Single-crystalline nanoribbon network field effect transistors from arbitrary two-dimensional materials. npj 2D Materials and Applications. 2022, 6 (1), 76. https://doi.org/10.1038/s41699-022-00356-y

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The last decade has seen a flurry of studies related to graphene nanoribbons due to their potential applications in the quantum realm. However, little experimental work has been done towards nanoribbons of other 2D materials due to the absence of synthesis routes. Furthermore, 2D material nanoribbon fabrication methods need to be scalable, while maintaining high crystallinity, sufficient yield, narrow size dis- tribution, and straight-forward device integrability.We apply a universal approach to synthesize high-quality networks of nanoribbons from arbitrary 2D materials. The wide applicability of this technique is demonstrated by fabricating MoS2, WS2, WSe2, and graphene nanoribbon field effect transistors that inherently do not suffer from in- terconnection resistances and network percolation issues. By relying on self-assembled and self-aligned organic nanostructures as masks, we demonstrate the possibility of controlling the predominant crystallographic direction of the nanoribbon's edges. Obtained nanoribbons demonstrate excellent optical and electronic properties inherent to their single crystalline structure. Electrical characterization shows record mobil- ities and very high ON currents for various TMDCs despite extreme width scaling (< 20 nm). Lastly, we explore decoration of nanoribbon edges with plasmonic particles paving the way towards the development of nanoribbon based plasmonic sensing and opto-electronic devices.

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