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説明:

We demonstrated halide vapor phase epitaxy of β-Ga2O3 on a native (-102) substrate, which should be scalable and useful for the formation of vertical fins and trenches with smooth (100)-faceted sidewalls using plasma-free microfabrication techniques, e.g., selective area growth and gas etching, for use in power device applications. No misoriented domains were detected in the epiwafer during X-ray pole figure measurements. The full width at half maximum values of the X-ray rocking curves of the epiwafer were virtually the same as those of the bare substrate. No domain boundaries were found using scanning transmission electron microscopy at the film/substrate interface. The growth rate was as high as 23 μm/h, which was comparable to the rate for a (001) epilayer that was grown simultaneously.

権利情報:

• In Copyright
  

  © 2023 IOP Publishing Ltd
  This is an author-created, un-copyedited version of an article accepted for publication/published
  in Semiconductor Science and Technology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1088/1361-6641/acf241.

キーワード: β-Ga2O3, HVPE

刊行年月日: 2023-10-01

出版者: IOP Publishing

掲載誌:

• SEMICONDUCTOR SCIENCE AND TECHNOLOGY (ISSN: 02681242) vol. 38 issue. 10 p. 105003-105003

研究助成金:

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4352

公開URL: https://doi.org/10.1088/1361-6641/acf241

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更新時刻: 2024-08-31 08:31:17 +0900

MDRでの公開時刻: 2024-08-31 08:31:17 +0900