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We demonstrated halide vapor phase epitaxy of β-Ga2O3 on a native (-102) substrate, which should be scalable and useful for the formation of vertical fins and trenches with smooth (100)-faceted sidewalls using plasma-free microfabrication techniques, e.g., selective area growth and gas etching, for use in power device applications. No misoriented domains were detected in the epiwafer during X-ray pole figure measurements. The full width at half maximum values of the X-ray rocking curves of the epiwafer were virtually the same as those of the bare substrate. No domain boundaries were found using scanning transmission electron microscopy at the film/substrate interface. The growth rate was as high as 23 μm/h, which was comparable to the rate for a (001) epilayer that was grown simultaneously.

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  © 2023 IOP Publishing Ltd
  This is an author-created, un-copyedited version of an article accepted for publication/published
  in Semiconductor Science and Technology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1088/1361-6641/acf241.

Keyword: β-Ga2O3, HVPE

Date published: 2023-10-01

Publisher: IOP Publishing

Journal:

• SEMICONDUCTOR SCIENCE AND TECHNOLOGY (ISSN: 02681242) vol. 38 issue. 10 p. 105003-105003

Funding:

Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4352

First published URL: https://doi.org/10.1088/1361-6641/acf241

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Updated at: 2024-08-31 08:31:17 +0900

Published on MDR: 2024-08-31 08:31:17 +0900