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Description:

We report a simple and effective method for improving dielectric/GaN interface properties. In the process, a 5 nm-thick SiO2 layer was deposited onto a GaN(0001) substrate via plasma-enhanced atomic layer deposition, followed by annealing at 800 °C for 300 s under a flowing N2 atmosphere. The SiO2 layer was then removed using buffered HF solution, and Pt/Al2O3/GaN metal-oxide-semiconductor capacitors were fabricated on the substrate. Positive-bias stress tests revealed that the flat-band voltage shifts were substantially reduced for devices fabricated using this process, probably because of improved interface crystallinity. This method can also be applied to other dielectric/GaN systems.

Rights:

• Creative Commons BY Attribution 4.0 International
  

Keyword: GaN

Date published: 2024-08-01

Publisher: The Electrochemical Society

Journal:

• ECS Journal of Solid State Science and Technology (ISSN: 21628769) vol. 13 issue. 8 085003

Funding:

• Ministry of Education, Culture, Sports, Science and Technology, Japan JPJ009777

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1149/2162-8777/ad6fd2

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Updated at: 2024-09-02 12:30:27 +0900

Published on MDR: 2024-09-02 12:30:27 +0900