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説明:

Spin valves are essential components in spintronic memory devices whose conductance is modulated by controlling spin-polarized electron tunnelling through the alignment of the magnetization in ferromagnetic elements. Whereas conventional spin valves unavoidably require at least two ferromagnetic elements, here we demonstrate a van der Waals spin valve based on a tunnel junction that comprises only one such ferromagnetic layer. Our devices combine an Fe3GeTe2 electrode acting as a spin injector together with a paramagnetic tunnel barrier, formed by a CrBr3 multilayer operated above its Curie temperature. We show that these devices exhibit a conductance modulation with values comparable to those of conventional spin valves. A quantitative analysis of the magnetoconductance that accounts for the field-induced magnetization of CrBr3, including the effect of exchange interaction, confirms that the spin valve effect originates from the paramagnetic response of the barrier, in the absence of spontaneous magnetization in CrBr3.

権利情報:

• In Copyright
  

  This document is the Accepted Manuscript version of a Published Article that appeared in final form in Nano Letters, copyright © 2025 American Chemical Society. To access the final published article see https://doi.org/10.1021/acs.nanolett.4c06301.

キーワード: Spin valve, Van der Waals heterostructure, Ferromagnetic tunnel junction

刊行年月日: 2025-03-05

出版者: American Chemical Society (ACS)

掲載誌:

• Nano Letters (ISSN: 15306984) vol. 25 issue. 9 p. 3549-3555

研究助成金:

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI:

公開URL: https://doi.org/10.1021/acs.nanolett.4c06301

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更新時刻: 2026-07-06 13:48:03 +0900

MDRでの公開時刻: 2026-07-06 16:27:58 +0900