Keyun Gu
(Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science)
;
Zilong Zhang
(Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science)
;
Wen Zhao
(Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science)
;
Guo Chen
(Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science)
;
Jian Huang
(China University of Geosciences)
;
Satoshi Koizumi
(Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science)
;
Yasuo Koide
(Research Center for Electronic and Optical Materials, National Institute for Materials Science)
;
Meiyong Liao
(Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science)
Collection
Citation
Description:
(abstract)In this work, we clarify the effect of oxygen terminal surface adsorption characteristic on the resonance behavior of SCD MEMS resonator. We examine the Q factors and resonance frequencies of the SCD MEMS resonators with the defective layer removed in a high vacuum chamber by in-situ heating and cooling. Based on ultrahigh stability of resonance characteristic of SCD resonator at room temperature (RT) and high temperature (from 313 K to 933 K), the Q factors are significantly improved after heating processing. The Q factor of the 80 μm-long cantilever is improved from 1.0x105 to 1.2x105 and the resonance frequency increases, as shown in Fig.1. We clarify that the desorption of the absorbates on the oxygen-terminated diamond surface induces the lower surface energy dissipation and higher Q factor. Hence, appropriate surface treatments are necessary for the development of MEMS devices with low energy dissipation and high sensitivity.
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Conference:
第85回応用物理学会秋季学術講演会
(2024-09-16 - 2024-09-20)
Funding:
Manuscript type: Not a journal article
MDR DOI: https://doi.org/10.48505/nims.5419
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Updated at: 2025-04-12 08:30:28 +0900
Published on MDR: 2025-04-11 20:23:04 +0900
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