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In this work, we clarify the effect of oxygen terminal surface adsorption characteristic on the resonance behavior of SCD MEMS resonator. We examine the Q factors and resonance frequencies of the SCD MEMS resonators with the defective layer removed in a high vacuum chamber by in-situ heating and cooling. Based on ultrahigh stability of resonance characteristic of SCD resonator at room temperature (RT) and high temperature (from 313 K to 933 K), the Q factors are significantly improved after heating processing. The Q factor of the 80 μm-long cantilever is improved from 1.0x105 to 1.2x105 and the resonance frequency increases, as shown in Fig.1. We clarify that the desorption of the absorbates on the oxygen-terminated diamond surface induces the lower surface energy dissipation and higher Q factor. Hence, appropriate surface treatments are necessary for the development of MEMS devices with low energy dissipation and high sensitivity.

権利情報:

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キーワード: ダイヤモンド, MEMS

会議: 第85回応用物理学会秋季学術講演会 (2024-09-16 - 2024-09-20)

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原稿種別: 論文以外のデータ

MDR DOI: https://doi.org/10.48505/nims.5419

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更新時刻: 2025-04-12 08:30:28 +0900

MDRでの公開時刻: 2025-04-11 20:23:04 +0900