Hydrogen-Terminated Diamond MOS Capacitors, MOSFETs, and MOSFET Logic Circuits

Jiangwei Liu; Yasuo Koide

doi:10.1007/978-3-031-47556-6

Book Hydrogen-Terminated Diamond MOS Capacitors, MOSFETs, and MOSFET Logic Circuits

Jiangwei Liu (Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group, National Institute for Materials Science) ; Yasuo Koide (Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group, National Institute for Materials Science)

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Jiangwei Liu, Yasuo Koide. Hydrogen-Terminated Diamond MOS Capacitors, MOSFETs, and MOSFET Logic Circuits. https://doi.org/10.1007/978-3-031-47556-6

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(abstract)

Wide-bandgap semiconductor diamond has been studied to develop high-power, high-frequency, and high-temperature electronic devices. However, their development has been limited by the low free carrier density that occurs in diamond at room temperature because of the high activation energies of p-type boron and n-type phosphorus dopants. Fortunately, hydrogen-terminated diamond (H-diamond) can accumulate two-dimensional hole gases on its surface with a high free carrier density. In this chapter, we review our recent progress in the fabrication of H-diamond metal-oxide-semiconductor (MOS) capacitors, MOS field-effect transistors (MOSFETs), and MOSFET logic circuits. Specifically, the leakage current densities for different oxide insulators on H-diamond and the capacitance-voltage properties for the Al2O3/H-diamond MOS capacitors are discussed. Planar-type, T-type, and triple-gate fin-type H-diamond MOSFETs are reviewed, and the fabrication and performance of depletion- and enhancement-mode H-diamond MOSFETs and logic circuits are summarized.

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