Book Hydrogen-Terminated Diamond MOS Capacitors, MOSFETs, and MOSFET Logic Circuits
Jiangwei Liu (author) (Search by this author)
ORCID https://orcid.org/0000-0003-2580-7401
Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group, National Institute for Materials Science
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Yasuo Koide (author) (Search by this author)
ORCID https://orcid.org/0000-0001-8321-9822
Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group, National Institute for Materials Science
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Jiangwei Liu, Yasuo Koide. Hydrogen-Terminated Diamond MOS Capacitors, MOSFETs, and MOSFET Logic Circuits. https://doi.org/10.1007/978-3-031-47556-6
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(abstract)

Wide-bandgap semiconductor diamond has been studied to develop high-power, high-frequency, and high-temperature electronic devices. However, their development has been limited by the low free carrier density that occurs in diamond at room temperature because of the high activation energies of p-type boron and n-type phosphorus dopants. Fortunately, hydrogen-terminated diamond (H-diamond) can accumulate two-dimensional hole gases on its surface with a high free carrier density. In this chapter, we review our recent progress in the fabrication of H-diamond metal-oxide-semiconductor (MOS) capacitors, MOS field-effect transistors (MOSFETs), and MOSFET logic circuits. Specifically, the leakage current densities for different oxide insulators on H-diamond and the capacitance-voltage properties for the Al2O3/H-diamond MOS capacitors are discussed. Planar-type, T-type, and triple-gate fin-type H-diamond MOSFETs are reviewed, and the fabrication and performance of depletion- and enhancement-mode H-diamond MOSFETs and logic circuits are summarized.

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Keyword: diamond

Date published: 2024-05-22

Publisher: Springer Cham

Journal:

  • Chapter of Novel Aspects of Diamond, Springer (ISSN: 14370859)

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Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4518

First published URL: https://doi.org/10.1007/978-3-031-47556-6

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Updated at: 2025-05-22 08:30:45 +0900

Published on MDR: 2025-05-22 08:23:15 +0900

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