Journal article Edge dependence of the supercurrent in the quantum Hall regime
Seong Jang (author) (Search by this author)
;
Geon-Hyoung Park (author) (Search by this author)
;
Kenji Watanabe (author) (Search by this author)
ORCID SAMURAI ;
Takashi Taniguchi (author) (Search by this author)
ORCID SAMURAI ;
Gil-Ho Lee (author) (Search by this author)
Collection

Citation
Seong Jang, Geon-Hyoung Park, Kenji Watanabe, Takashi Taniguchi, Gil-Ho Lee. Edge dependence of the supercurrent in the quantum Hall regime. Physical Review B. 2025, 112 (24), L241401. https://doi.org/10.1103/m3lt-6cnc

Description:

(abstract)

The observation of Josephson current in the quantum Hall regime has attracted considerable attention, revealing the coexistence of two seemingly incompatible phases: the quantum Hall and superconducting states. However, the mechanism underlying the Josephson current remains unclear because of the observed ℎ⁡/2⁢𝑒 magnetic interference period and the absence of precisely quantized Hall plateaus. To address this issue, we investigate the edge dependence of the Josephson current in graphene Josephson junctions operating in the quantum Hall regime. By systematically comparing devices with native, etched, edge-free, and gate-defined edges, we demonstrate that the Josephson current is confined to the physical edges and is highly sensitive to specific edge configurations. Our findings provide direct evidence that counter-propagating quantum Hall edge states mediate Andreev bound states, enabling Josephson coupling. These results clarify the underlying mechanism of Josephson current in the quantum Hall regime and offer new strategies for engineering superconducting hybrid devices.

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Keyword: Josephson current, Quantum Hall effect, Graphene

Date published: 2025-12-01

Publisher: American Physical Society (APS)

Journal:

  • Physical Review B (ISSN: 1550235X) vol. 112 issue. 24 p. 0-0 L241401

Funding:

  • National Research Foundation of Korea RS-2022-NR068223
  • National Research Foundation of Korea RS-2024–00393599
  • National Research Foundation of Korea RS-2024–00442710
  • National Research Foundation of Korea RS-2024–00444725
  • National Research Foundation of Korea 2022R1A6A3A01086903
  • Iran Telecommunication Research Center IITP-2025-RS-2022–00164799
  • Samsung Science and Technology Foundation SSTF-BA2401-03
  • Samsung Science and Technology Foundation SSTF-BA2101-06
  • Samsung IO201207-07801-01

Manuscript type: Author's version (Accepted manuscript)

MDR DOI:

First published URL: https://doi.org/10.1103/m3lt-6cnc

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Updated at: 2026-06-26 17:02:56 +0900

Published on MDR: 2026-06-26 18:28:47 +0900

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