ジャーナル論文 Edge dependence of the supercurrent in the quantum Hall regime
Seong Jang (author) (この著者で検索)
;
Geon-Hyoung Park (author) (この著者で検索)
;
Kenji Watanabe (author) (この著者で検索)
ORCID SAMURAI ;
Takashi Taniguchi (author) (この著者で検索)
ORCID SAMURAI ;
Gil-Ho Lee (author) (この著者で検索)
コレクション

引用
Seong Jang, Geon-Hyoung Park, Kenji Watanabe, Takashi Taniguchi, Gil-Ho Lee. Edge dependence of the supercurrent in the quantum Hall regime. Physical Review B. 2025, 112 (24), L241401. https://doi.org/10.1103/m3lt-6cnc

説明:

(abstract)

The observation of Josephson current in the quantum Hall regime has attracted considerable attention, revealing the coexistence of two seemingly incompatible phases: the quantum Hall and superconducting states. However, the mechanism underlying the Josephson current remains unclear because of the observed ℎ⁡/2⁢𝑒 magnetic interference period and the absence of precisely quantized Hall plateaus. To address this issue, we investigate the edge dependence of the Josephson current in graphene Josephson junctions operating in the quantum Hall regime. By systematically comparing devices with native, etched, edge-free, and gate-defined edges, we demonstrate that the Josephson current is confined to the physical edges and is highly sensitive to specific edge configurations. Our findings provide direct evidence that counter-propagating quantum Hall edge states mediate Andreev bound states, enabling Josephson coupling. These results clarify the underlying mechanism of Josephson current in the quantum Hall regime and offer new strategies for engineering superconducting hybrid devices.

権利情報:

キーワード: Josephson current, Quantum Hall effect, Graphene

刊行年月日: 2025-12-01

出版者: American Physical Society (APS)

掲載誌:

  • Physical Review B (ISSN: 1550235X) vol. 112 issue. 24 p. 0-0 L241401

研究助成金:

  • National Research Foundation of Korea RS-2022-NR068223
  • National Research Foundation of Korea RS-2024–00393599
  • National Research Foundation of Korea RS-2024–00442710
  • National Research Foundation of Korea RS-2024–00444725
  • National Research Foundation of Korea 2022R1A6A3A01086903
  • Iran Telecommunication Research Center IITP-2025-RS-2022–00164799
  • Samsung Science and Technology Foundation SSTF-BA2401-03
  • Samsung Science and Technology Foundation SSTF-BA2101-06
  • Samsung IO201207-07801-01

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI:

公開URL: https://doi.org/10.1103/m3lt-6cnc

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更新時刻: 2026-06-26 17:02:56 +0900

MDRでの公開時刻: 2026-06-26 18:28:47 +0900

ファイル名 サイズ
ファイル名 2025A01684G_20251027_Supplemental Material.docx (サムネイル)
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サイズ 4.48MB 詳細
ファイル名 2025A01684G_20251029_Manuscript.pdf
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サイズ 1.02MB 詳細