論文 Edge Contacts to Atomically Precise Graphene Nanoribbons

Wenhao Huang ; Oliver Braun ; David I. Indolese ; Gabriela Borin Barin ; Guido Gandus ; Michael Stiefel ; Antonis Olziersky ; Klaus Müllen ; Mathieu Luisier ; Daniele Passerone ; Pascal Ruffieux ; Christian Schönenberger ; Kenji Watanabe SAMURAI ORCID (National Institute for Materials Science) ; Takashi Taniguchi SAMURAI ORCID (National Institute for Materials Science) ; Roman Fasel ; Jian Zhang ; Michel Calame ; Mickael L. Perrin

コレクション

引用
Wenhao Huang, Oliver Braun, David I. Indolese, Gabriela Borin Barin, Guido Gandus, Michael Stiefel, Antonis Olziersky, Klaus Müllen, Mathieu Luisier, Daniele Passerone, Pascal Ruffieux, Christian Schönenberger, Kenji Watanabe, Takashi Taniguchi, Roman Fasel, Jian Zhang, Michel Calame, Mickael L. Perrin. Edge Contacts to Atomically Precise Graphene Nanoribbons. ACS Nano. 2023, 17 (19), 18706-18715. https://doi.org/10.1021/acsnano.3c00782
SAMURAI

説明:

(abstract)

Bottom-up synthesized graphene nanoribbons (GNRs) are an emerging class of designer quantum materials that possess superior properties including atomically- controlled uniformity and chemically tunable electronic properties. GNR-based devices are promising candidates for next-generation electronic, spintronic, and thermoelectric applications. However, a significant portion of the GNRs synthe- sized to date are unstable under ambient conditions and require protection from the environment. Here, we encapsulate 9-atom wide armchair GNRs (9-AGNRs) in hexagonal boron-nitride (h−BN) and contact them using metallic edge contacts. At 9 K, quantum dot (QD) behavior with well-defined Coulomb diamonds (CDs) is observed, with addition energies in the range of 16 to 400 meV. For increasing temperatures, charge transport through the 9-AGNR film, occur- ring via a combination of temperature-activated hopping and polaron-assisted tunneling, starts to dominate, with a crossover between QD transport and film transport occurring at around 100 K. At room temperature, our short-channel field-effect transistor devices exhibit on/off ratios as high as 3×10^5. Overall, our work demonstrates that 9-AGNRs can be contacted while being encapsulated in h−BN. This strategy opens the way for a whole range of GNRs candidates that are unstable under ambient conditions to be incorporated into electronic and spintronic devices.

権利情報:

キーワード: Graphene nanoribbons, electrical contact, quantum dot

刊行年月日: 2023-10-10

出版者: American Chemical Society (ACS)

掲載誌:

  • ACS Nano (ISSN: 1936086X) vol. 17 issue. 19 p. 18706-18715

研究助成金:

  • Werner Siemens-Stiftung
  • Ministry of Education, Culture, Sports, Science and Technology
  • Schweizerischer Nationalfonds zur F?rderung der Wissenschaftlichen Forschung 189924
  • Schweizerischer Nationalfonds zur F?rderung der Wissenschaftlichen Forschung 196795
  • Schweizerischer Nationalfonds zur F?rderung der Wissenschaftlichen Forschung 200020 182015
  • Schweizerischer Nationalfonds zur F?rderung der Wissenschaftlichen Forschung 205602
  • Schweizerischer Nationalfonds zur F?rderung der Wissenschaftlichen Forschung PCEFP2_203663
  • Staatssekretariat f?r Bildung, Forschung und Innovation MB22.00076
  • H2020 Marie Sklodowska-Curie Actions 754364
  • H2020 Future and Emerging Technologies 767187
  • H2020 Future and Emerging Technologies 881603
  • Office of Naval Research N00014-18-1-2708
  • Japan Society for the Promotion of Science 20H00354
  • Japan Society for the Promotion of Science 21H05233
  • Japan Society for the Promotion of Science 23H02052
  • H2020 European Research Council 787414

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1021/acsnano.3c00782

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更新時刻: 2025-02-14 12:31:08 +0900

MDRでの公開時刻: 2025-02-14 12:31:08 +0900

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