Wenhao Huang
;
Oliver Braun
;
David I. Indolese
;
Gabriela Borin Barin
;
Guido Gandus
;
Michael Stiefel
;
Antonis Olziersky
;
Klaus Müllen
;
Mathieu Luisier
;
Daniele Passerone
;
Pascal Ruffieux
;
Christian Schönenberger
;
Kenji Watanabe
(National Institute for Materials Science)
;
Takashi Taniguchi
(National Institute for Materials Science)
;
Roman Fasel
;
Jian Zhang
;
Michel Calame
;
Mickael L. Perrin
Description:
(abstract)Bottom-up synthesized graphene nanoribbons (GNRs) are an emerging class of designer quantum materials that possess superior properties including atomically- controlled uniformity and chemically tunable electronic properties. GNR-based devices are promising candidates for next-generation electronic, spintronic, and thermoelectric applications. However, a significant portion of the GNRs synthe- sized to date are unstable under ambient conditions and require protection from the environment. Here, we encapsulate 9-atom wide armchair GNRs (9-AGNRs) in hexagonal boron-nitride (h−BN) and contact them using metallic edge contacts. At 9 K, quantum dot (QD) behavior with well-defined Coulomb diamonds (CDs) is observed, with addition energies in the range of 16 to 400 meV. For increasing temperatures, charge transport through the 9-AGNR film, occur- ring via a combination of temperature-activated hopping and polaron-assisted tunneling, starts to dominate, with a crossover between QD transport and film transport occurring at around 100 K. At room temperature, our short-channel field-effect transistor devices exhibit on/off ratios as high as 3×10^5. Overall, our work demonstrates that 9-AGNRs can be contacted while being encapsulated in h−BN. This strategy opens the way for a whole range of GNRs candidates that are unstable under ambient conditions to be incorporated into electronic and spintronic devices.
Rights:
Keyword: Graphene nanoribbons, electrical contact, quantum dot
Date published: 2023-10-10
Publisher: American Chemical Society (ACS)
Journal:
Funding:
Manuscript type: Publisher's version (Version of record)
MDR DOI:
First published URL: https://doi.org/10.1021/acsnano.3c00782
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Updated at: 2025-02-14 12:31:08 +0900
Published on MDR: 2025-02-14 12:31:08 +0900
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